Formation of epitaxial NiO by oxygen implantation in [100] Ni - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Conference Papers Nuclear Instruments and Methods Year : 1981
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in2p3-00013173 , version 1 (12-04-1999)

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  • HAL Id : in2p3-00013173 , version 1

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M.M. Tosic, A.V. Drigo, C. Cohen, L. Thome, J. Chaumont, et al.. Formation of epitaxial NiO by oxygen implantation in [100] Ni. International Conference on Ion Beam Modification of Materials 2, Jul 1980, Albany, United States. pp.303-313. ⟨in2p3-00013173⟩
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