Amorphization of Pd-Si at 300K - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Radiation Effects Year : 1984
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in2p3-00013232 , version 1 (17-05-1999)


  • HAL Id : in2p3-00013232 , version 1


Jun Fan Xiang, A. Traverse, A. Thome, A. Benyagoub, J. Chaumont, et al.. Amorphization of Pd-Si at 300K. Radiation Effects, 1984, 81, pp.101-105. ⟨in2p3-00013232⟩
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