Study of surface roughening of tensily strained Si$_{1-x-y}$Ge$_x$C$_y$ films grown by ultra high vacuum-chemical vapor deposition - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Thin Solid Films Year : 2003

Study of surface roughening of tensily strained Si$_{1-x-y}$Ge$_x$C$_y$ films grown by ultra high vacuum-chemical vapor deposition

C. Calmes
  • Function : Author
D. Bouchier
  • Function : Author
D. Debarre
  • Function : Author
V. Le Thanh
  • Function : Author
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in2p3-00013771 , version 1 (30-06-2003)

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  • HAL Id : in2p3-00013771 , version 1

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C. Calmes, D. Bouchier, D. Debarre, V. Le Thanh, C. Clerc. Study of surface roughening of tensily strained Si$_{1-x-y}$Ge$_x$C$_y$ films grown by ultra high vacuum-chemical vapor deposition. Thin Solid Films, 2003, 428, pp.150-155. ⟨in2p3-00013771⟩
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