Study of a CMOS-JFET-bipolar radiation hard analog-digital technology suitable for high energy physics electronics - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles IEEE Transactions on Nuclear Science Year : 1993

Study of a CMOS-JFET-bipolar radiation hard analog-digital technology suitable for high energy physics electronics

M. Dentan
  • Function : Author
E. Delagnes
N. Fourches
  • Function : Author
M. Rouger
  • Function : Author
R. Truche
  • Function : Author
J.P. Blanc
  • Function : Author
E. Delevoye
  • Function : Author
J. Gautier
  • Function : Author
J.L. Pelloie
  • Function : Author
J. de Pontcharra
  • Function : Author
O. Flament
  • Function : Author
J.L. Leray
  • Function : Author
J.L. Martin
  • Function : Author
J. Montaron
  • Function : Author
O. Musseau
  • Function : Author
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Dates and versions

in2p3-00013841 , version 1 (18-07-2003)

Identifiers

  • HAL Id : in2p3-00013841 , version 1

Cite

M. Dentan, E. Delagnes, N. Fourches, M. Rouger, M.C. Habrard, et al.. Study of a CMOS-JFET-bipolar radiation hard analog-digital technology suitable for high energy physics electronics. IEEE Transactions on Nuclear Science, 1993, 40, pp.1555-1560. ⟨in2p3-00013841⟩
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