Study of proton radiation effects on analog IC designed for high energy physics in a BiCMOS-JFET radhard SOI technology - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles IEEE Transactions on Nuclear Science Year : 1994

Study of proton radiation effects on analog IC designed for high energy physics in a BiCMOS-JFET radhard SOI technology

M. Dentan
  • Function : Author
E. Delagnes
N. Fourches
  • Function : Author
M. Rouger
  • Function : Author
R. Truche
  • Function : Author
E. Delevoye
  • Function : Author
J. de Pontcharra
  • Function : Author
J.P. Blanc
  • Function : Author
O. Flament
  • Function : Author
J. Leray
  • Function : Author
O. Musseau
  • Function : Author
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Dates and versions

in2p3-00013842 , version 1 (18-07-2003)

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  • HAL Id : in2p3-00013842 , version 1

Cite

L. Blanquart, P. Delpierre, M.C. Habrard, A. Mekkaoui, T. Mouthuy, et al.. Study of proton radiation effects on analog IC designed for high energy physics in a BiCMOS-JFET radhard SOI technology. IEEE Transactions on Nuclear Science, 1994, 41, pp.2525-2529. ⟨in2p3-00013842⟩
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