Plasma-enhanced chemical vapor deposition of SiO$_2$ from a Si(CH$_3)_3$Cl precursor and mixtures Ar/O$_2$ as plasma gas - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Journal of Vacuum Science & Technology A Year : 2003

Plasma-enhanced chemical vapor deposition of SiO$_2$ from a Si(CH$_3)_3$Cl precursor and mixtures Ar/O$_2$ as plasma gas

A. Barranco
  • Function : Author
J. Cotrino
  • Function : Author
F. Yubero
  • Function : Author
T. Girardeau
  • Function : Author
S. Camelio
A.R. Gonzalez-Elipe
  • Function : Author
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Dates and versions

in2p3-00013943 , version 1 (21-08-2003)

Identifiers

  • HAL Id : in2p3-00013943 , version 1

Cite

A. Barranco, J. Cotrino, F. Yubero, T. Girardeau, S. Camelio, et al.. Plasma-enhanced chemical vapor deposition of SiO$_2$ from a Si(CH$_3)_3$Cl precursor and mixtures Ar/O$_2$ as plasma gas. Journal of Vacuum Science & Technology A, 2003, 21, pp.900-905. ⟨in2p3-00013943⟩
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