Phosphorous characterization and quantification in CVD SiO2(P,B)/SiO2/si multilayer system by low energy PIXE - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Year : 2002

Phosphorous characterization and quantification in CVD SiO2(P,B)/SiO2/si multilayer system by low energy PIXE

B. Nsouli
  • Function : Author
M. Roumie
  • Function : Author
K. Zahraman
  • Function : Author
M. Nasreddine
  • Function : Author
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in2p3-00014246 , version 1 (17-12-2003)

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  • HAL Id : in2p3-00014246 , version 1

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B. Nsouli, M. Roumie, K. Zahraman, J.-P. Thomas, M. Nasreddine. Phosphorous characterization and quantification in CVD SiO2(P,B)/SiO2/si multilayer system by low energy PIXE. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002, 192, pp.311-317. ⟨in2p3-00014246⟩
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