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in2p3-00015150, version 1
Journal articles
Electrically active defects in detector-grade CdTe:Cl and CdZnTe materials grown by THM and HpBm
L. Chibani
1
M. Hage-Ali
1
P. Siffert
1
Details
1
IReS - Institut de Recherches Subatomiques
L. Chibani
1
Author
M. Hage-Ali
1
Author
P. Siffert
1
Author
1
IReS - Institut de Recherches Subatomiques
(23 rue du Loess - BP 28 - 67037 Strasbourg Cedex 2 - France)
StructId : 125
IN2P3 - Institut National de Physique Nucléaire et de Physique des Particules du CNRS
(France)
StructId : 300046
Cancéropôle du Grand Est
(France)
StructId : 300247
Université Louis Pasteur - Strasbourg I
(France)
StructId : 300320
CNRS - Centre National de la Recherche Scientifique
: UMR7500
(France)
StructId : 441569
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Journal articles
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Contributor :
Yvette Heyd
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Submitted on : Friday, March 24, 2000 - 4:34:02 PM
Last modification on : Thursday, April 23, 2020 - 2:26:18 PM
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in2p3-00015150, version 1
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Citation
L. Chibani, M. Hage-Ali, P. Siffert. Electrically active defects in detector-grade CdTe:Cl and CdZnTe materials grown by THM and HpBm.
Journal of Crystal Growth
, Elsevier, 1996, 161, pp.153-158.
⟨in2p3-00015150⟩
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