Electrically active defects in detector-grade CdTe:Cl and CdZnTe materials grown by THM and HpBm - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Journal of Crystal Growth Year : 1996

Electrically active defects in detector-grade CdTe:Cl and CdZnTe materials grown by THM and HpBm

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in2p3-00015150 , version 1 (24-03-2000)

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  • HAL Id : in2p3-00015150 , version 1

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L. Chibani, M. Hage-Ali, P. Siffert. Electrically active defects in detector-grade CdTe:Cl and CdZnTe materials grown by THM and HpBm. Journal of Crystal Growth, 1996, 161, pp.153-158. ⟨in2p3-00015150⟩
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