Dynamics of lattice damage accumulation for MeV ions in silicon - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Conference Papers Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Year : 1992

Dynamics of lattice damage accumulation for MeV ions in silicon

A. Golanski
  • Function : Author
O.W. Holland
  • Function : Author
S.J. Pennycook
  • Function : Author
C.W. White
  • Function : Author
No file

Dates and versions

in2p3-00015898 , version 1 (30-05-2000)

Identifiers

  • HAL Id : in2p3-00015898 , version 1

Cite

A. Golanski, A. Grob, J.J. Grob, O.W. Holland, S.J. Pennycook, et al.. Dynamics of lattice damage accumulation for MeV ions in silicon. Spring Meeting of the European Materials Research Society (E-Mrs) Symposium C on High Energy Ion Implantation, May 1991, Strasbourg, France. pp.365-371. ⟨in2p3-00015898⟩
2 View
0 Download

Share

Gmail Mastodon Facebook X LinkedIn More