Free-carrier concentration in n-doped inp crystals determined by raman scattering measurements - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Applied Surface Science Year : 1991

Free-carrier concentration in n-doped inp crystals determined by raman scattering measurements

B. Boudart
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in2p3-00015902 , version 1 (30-05-2000)

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  • HAL Id : in2p3-00015902 , version 1

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B. Boudart, B. Prevot, C. Schwab. Free-carrier concentration in n-doped inp crystals determined by raman scattering measurements. Applied Surface Science, 1991, 50, pp.295-299. ⟨in2p3-00015902⟩
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