Properties of Silicon dioxide films prepared by pulsed-laser ablation - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Journal of Applied Physics Year : 1992

Properties of Silicon dioxide films prepared by pulsed-laser ablation

No file

Dates and versions

in2p3-00016011 , version 1 (06-06-2000)

Identifiers

  • HAL Id : in2p3-00016011 , version 1

Cite

A. Slaoui, E. Fogarassy, C. Fuchs, P. Siffert. Properties of Silicon dioxide films prepared by pulsed-laser ablation. Journal of Applied Physics, 1992, 71, pp.590-596. ⟨in2p3-00016011⟩
7 View
0 Download

Share

Gmail Mastodon Facebook X LinkedIn More