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Journal Articles Japanese Journal of Applied Physics Year : 1990

Charge transfer as an alternative to metastability of defects in semi-insulating GaAs

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1
B. Mari
B. Meyer
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Dates and versions

in2p3-00016042 , version 1 (07-06-2000)

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  • HAL Id : in2p3-00016042 , version 1

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T. Benchiguer, E. Christophel, A. Goltzene, B. Mari, B. Meyer, et al.. Charge transfer as an alternative to metastability of defects in semi-insulating GaAs. Japanese Journal of Applied Physics, 1990, 29, pp.L1569. ⟨in2p3-00016042⟩
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