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Journal Articles Applied physics. A, Materials science & processing Year : 1990

Rapid thermal process-induced recombination centers in ion implanted silicon

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in2p3-00016043 , version 1 (07-06-2000)

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  • HAL Id : in2p3-00016043 , version 1

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W. Eichhammer, M. Hage-Ali, R. Stuck, P. Siffert. Rapid thermal process-induced recombination centers in ion implanted silicon. Applied physics. A, Materials science & processing, 1990, 50, pp.405. ⟨in2p3-00016043⟩
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