Influence of In doping on dislocations in liquid encapsulated Czochralski (LEC) grown gallium arsenide - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Journal of Crystal Growth Year : 1990

Influence of In doping on dislocations in liquid encapsulated Czochralski (LEC) grown gallium arsenide

J. Wu
  • Function : Author
P.G. Mo
  • Function : Author
G.Y. Wang
  • Function : Author
S. Benakki
  • Function : Author
J.R. Wang
  • Function : Author
C.H. Lee
  • Function : Author
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Dates and versions

in2p3-00016157 , version 1 (29-06-2000)

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  • HAL Id : in2p3-00016157 , version 1

Cite

J. Wu, P.G. Mo, G.Y. Wang, S. Benakki, E. Christophel, et al.. Influence of In doping on dislocations in liquid encapsulated Czochralski (LEC) grown gallium arsenide. Journal of Crystal Growth, 1990, 102, pp.701. ⟨in2p3-00016157⟩
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