Boron doping of silicon by excimer laser irradiation in a reactive atmosphere. The incorporation mechanism - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Applied physics. A, Materials science & processing Year : 1990

Boron doping of silicon by excimer laser irradiation in a reactive atmosphere. The incorporation mechanism

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in2p3-00016162 , version 1 (29-06-2000)

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  • HAL Id : in2p3-00016162 , version 1

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A. Slaoui, F. Foulon, R. Stuck, P. Siffert. Boron doping of silicon by excimer laser irradiation in a reactive atmosphere. The incorporation mechanism. Applied physics. A, Materials science & processing, 1990, 50, pp.479. ⟨in2p3-00016162⟩
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