Electrically active defects in silicon after excimer laser processing - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Journal of Applied Physics Year : 1989

Electrically active defects in silicon after excimer laser processing

No file

Dates and versions

in2p3-00016212 , version 1 (04-07-2000)

Identifiers

  • HAL Id : in2p3-00016212 , version 1

Cite

B. Hartiti, A. Slaoui, J.C. Muller, P. Siffert. Electrically active defects in silicon after excimer laser processing. Journal of Applied Physics, 1989, 66, pp.3934. ⟨in2p3-00016212⟩
2 View
0 Download

Share

Gmail Mastodon Facebook X LinkedIn More