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Journal Articles Applied Physics Letters Year : 1989

Persistent photquenching and anion antisite defects in neutron-irradiated GaAs

A. Goltzene
  • Function : Author
B. Meyer
  • Function : Author
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in2p3-00016214 , version 1 (04-07-2000)

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  • HAL Id : in2p3-00016214 , version 1

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A. Goltzene, B. Meyer, C. Schwab. Persistent photquenching and anion antisite defects in neutron-irradiated GaAs. Applied Physics Letters, 1989, 54, pp.907. ⟨in2p3-00016214⟩
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