Optimization of the parameters involved in the photochemical doping of Si with a pulsed ArF excimer laser - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Applied Surface Science Year : 1989

Optimization of the parameters involved in the photochemical doping of Si with a pulsed ArF excimer laser

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in2p3-00016215 , version 1 (04-07-2000)

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  • HAL Id : in2p3-00016215 , version 1

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F. Foulon, A. Slaoui, E. Fogarassy, R. Stuck, C. Fuchs, et al.. Optimization of the parameters involved in the photochemical doping of Si with a pulsed ArF excimer laser. Applied Surface Science, 1989, 36, pp.384. ⟨in2p3-00016215⟩
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