Annealing behavior of strain-induced anion-antisites in semi-insulating GaAs - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Journal of Applied Physics Year : 1989

Annealing behavior of strain-induced anion-antisites in semi-insulating GaAs

G. Benakki
  • Function : Author
E. Christoffel
  • Function : Author
A. Goltzene
  • Function : Author
Wang Guangyu
  • Function : Author
Wu Ju
  • Function : Author
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Dates and versions

in2p3-00016223 , version 1 (04-07-2000)

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  • HAL Id : in2p3-00016223 , version 1

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G. Benakki, E. Christoffel, A. Goltzene, C. Schwab, Wang Guangyu, et al.. Annealing behavior of strain-induced anion-antisites in semi-insulating GaAs. Journal of Applied Physics, 1989, 66, pp.2651. ⟨in2p3-00016223⟩
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