Melting threshold of crystalline and amorphized Si irradiated with a pulsed ArF (193 nm) excimer laser - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Applied physics. A, Materials science & processing Year : 1988

Melting threshold of crystalline and amorphized Si irradiated with a pulsed ArF (193 nm) excimer laser

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in2p3-00016236 , version 1 (04-07-2000)

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  • HAL Id : in2p3-00016236 , version 1

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F. Foulon, E. Fogarassy, A. Slaoui, C. Fuchs, S. de Unamuno, et al.. Melting threshold of crystalline and amorphized Si irradiated with a pulsed ArF (193 nm) excimer laser. Applied physics. A, Materials science & processing, 1988, 45, pp.361. ⟨in2p3-00016236⟩
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