Variation of yield with thickness in sims and pdms: measurements of secondary ion emission from organized molecular films - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Year : 1988

Variation of yield with thickness in sims and pdms: measurements of secondary ion emission from organized molecular films

G. Bolbach
  • Function : Author
R. Beavis
  • Function : Author
W. Ens
  • Function : Author
D.E. Main
  • Function : Author
B. Schueler
  • Function : Author
K.G. Standing
  • Function : Author
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Dates and versions

in2p3-00016565 , version 1 (25-08-2000)

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  • HAL Id : in2p3-00016565 , version 1

Cite

G. Bolbach, R. Beavis, S. Della Negra, C. Deprun, W. Ens, et al.. Variation of yield with thickness in sims and pdms: measurements of secondary ion emission from organized molecular films. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988, 30, pp.74-82. ⟨in2p3-00016565⟩
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