16 MeV-electron-induced defects in iron-doped indium phosphide - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Journal of Applied Physics Year : 1998

16 MeV-electron-induced defects in iron-doped indium phosphide

M. Kamta
  • Function : Author
C. Schwab
  • Function : Author
S. Domngang
  • Function : Author
No file

Dates and versions

in2p3-00016662 , version 1 (31-08-2000)

Identifiers

  • HAL Id : in2p3-00016662 , version 1

Cite

M. Kamta, C. Schwab, S. Domngang, J.P. Engel. 16 MeV-electron-induced defects in iron-doped indium phosphide. Journal of Applied Physics, 1998, 84, pp.4273-4280. ⟨in2p3-00016662⟩
3 View
0 Download

Share

Gmail Mastodon Facebook X LinkedIn More