Excitation of deep lying hole states in $^{11}$C, $^{15}$O, $^{27}$Si and $^{57}$Ni with the ($^3$He, $\alpha$) reaction at 216 MeV - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Physical Review C Year : 1975

Excitation of deep lying hole states in $^{11}$C, $^{15}$O, $^{27}$Si and $^{57}$Ni with the ($^3$He, $\alpha$) reaction at 216 MeV

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in2p3-00017047 , version 1 (14-09-2000)

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  • HAL Id : in2p3-00017047 , version 1

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E. Gerlic, H. Langevin-Joliot, P. Roos, J. van de Wiele, J.P. Didelez, et al.. Excitation of deep lying hole states in $^{11}$C, $^{15}$O, $^{27}$Si and $^{57}$Ni with the ($^3$He, $\alpha$) reaction at 216 MeV. Physical Review C, 1975, 12, pp.2106-2110. ⟨in2p3-00017047⟩
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