On the kinetics of solid phase regrowth and dopant activation during rapid thermal annealing of implantation amorphized silicon - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Journal of Applied Physics Year : 1988

On the kinetics of solid phase regrowth and dopant activation during rapid thermal annealing of implantation amorphized silicon

W.O. Adekoya
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J.C. Muller
  • Function : Author
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in2p3-00017459 , version 1 (26-09-2000)

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  • HAL Id : in2p3-00017459 , version 1

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W.O. Adekoya, M. Hage-Ali, J.C. Muller, P. Siffert. On the kinetics of solid phase regrowth and dopant activation during rapid thermal annealing of implantation amorphized silicon. Journal of Applied Physics, 1988, 64, pp.666. ⟨in2p3-00017459⟩
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