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Journal Articles Applied Physics Letters Year : 1988

Excimer laser induced oxidation of ion-implanted Si

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in2p3-00017473 , version 1 (26-09-2000)

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  • HAL Id : in2p3-00017473 , version 1

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E. Fogarassy, C.W. White, A. Slaoui, C. Fuchs, P. Siffert, et al.. Excimer laser induced oxidation of ion-implanted Si. Applied Physics Letters, 1988, 53, pp.1720. ⟨in2p3-00017473⟩
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