High quality silicon-on-insulator structures formed by oxygen implantation and annealing

D.P. Vu; Marjorie Haond; C. d'Anterroches; J.C. Oberlin; A. Golanski; J.J. Grob; S. Maillet

Journal Articles Applied Physics Letters Year : 1988

High quality silicon-on-insulator structures formed by oxygen implantation and annealing

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D.P. Vu

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Marjorie Haond

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C. d'Anterroches

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J.C. Oberlin

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A. Golanski

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J.J. Grob

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Institut de Recherches Subatomiques

S. Maillet

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Submitted on : Wednesday, September 27, 2000-9:54:39 AM

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in2p3-00017507 , version 1 (27-09-2000)

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D.P. Vu, Marjorie Haond, C. d'Anterroches, J.C. Oberlin, A. Golanski, et al.. High quality silicon-on-insulator structures formed by oxygen implantation and annealing. Applied Physics Letters, 1988, 52, pp.819. ⟨in2p3-00017507⟩

High quality silicon-on-insulator structures formed by oxygen implantation and annealing

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