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Journal Articles Applied Physics Letters Year : 1988

High quality silicon-on-insulator structures formed by oxygen implantation and annealing

D.P. Vu
  • Function : Author
Marjorie Haond
  • Function : Author
  • PersonId : 829319
C. d'Anterroches
  • Function : Author
J.C. Oberlin
  • Function : Author
A. Golanski
  • Function : Author
S. Maillet
  • Function : Author
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in2p3-00017507 , version 1 (27-09-2000)

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  • HAL Id : in2p3-00017507 , version 1

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D.P. Vu, Marjorie Haond, C. d'Anterroches, J.C. Oberlin, A. Golanski, et al.. High quality silicon-on-insulator structures formed by oxygen implantation and annealing. Applied Physics Letters, 1988, 52, pp.819. ⟨in2p3-00017507⟩
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