Electron diffusion length in rapid thermal processed p-type silicon

Thuong-Quat Vu; W. Eichhammer; P. Siffert

Journal Articles Applied Physics Letters Year : 1988

Electron diffusion length in rapid thermal processed p-type silicon

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Thuong-Quat Vu

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W. Eichhammer

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P. Siffert

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Institut de Recherches Subatomiques

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in2p3-00017508 , version 1 (27-09-2000)

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Thuong-Quat Vu, W. Eichhammer, P. Siffert. Electron diffusion length in rapid thermal processed p-type silicon. Applied Physics Letters, 1988, 53, pp.11928. ⟨in2p3-00017508⟩

Electron diffusion length in rapid thermal processed p-type silicon

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