Direct evidence of recrystallization rate enhancement during Rapid Thermal Annealing of phosphorus amorphized silicon layers

W.O. Adekoya; M. Hage-Ali; J.C. Muller; P. Siffert

Journal Articles Applied Physics Letters Year : 1987

Direct evidence of recrystallization rate enhancement during Rapid Thermal Annealing of phosphorus amorphized silicon layers

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1

W.O. Adekoya

Function : Author

M. Hage-Ali

Function : Author

Institut de Recherches Subatomiques

J.C. Muller

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P. Siffert

Function : Author

Institut de Recherches Subatomiques

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in2p3-00017592 , version 1 (28-09-2000)

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W.O. Adekoya, M. Hage-Ali, J.C. Muller, P. Siffert. Direct evidence of recrystallization rate enhancement during Rapid Thermal Annealing of phosphorus amorphized silicon layers. Applied Physics Letters, 1987, 50, pp.1736. ⟨in2p3-00017592⟩

Direct evidence of recrystallization rate enhancement during Rapid Thermal Annealing of phosphorus amorphized silicon layers

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