Direct evidence of recrystallization rate enhancement during Rapid Thermal Annealing of phosphorus amorphized silicon layers - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Applied Physics Letters Year : 1987

Direct evidence of recrystallization rate enhancement during Rapid Thermal Annealing of phosphorus amorphized silicon layers

W.O. Adekoya
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J.C. Muller
  • Function : Author
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in2p3-00017592 , version 1 (28-09-2000)

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  • HAL Id : in2p3-00017592 , version 1

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W.O. Adekoya, M. Hage-Ali, J.C. Muller, P. Siffert. Direct evidence of recrystallization rate enhancement during Rapid Thermal Annealing of phosphorus amorphized silicon layers. Applied Physics Letters, 1987, 50, pp.1736. ⟨in2p3-00017592⟩
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