Oxygen behaviour during titanium silicide formation by rapid thermal annealing - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Journal of Applied Physics Year : 1987

Oxygen behaviour during titanium silicide formation by rapid thermal annealing

R. Pantel
  • Function : Author
D. Levy
  • Function : Author
D. Nicolas
  • Function : Author
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Dates and versions

in2p3-00017601 , version 1 (28-09-2000)

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  • HAL Id : in2p3-00017601 , version 1

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R. Pantel, D. Levy, D. Nicolas, J.P. Ponpon. Oxygen behaviour during titanium silicide formation by rapid thermal annealing. Journal of Applied Physics, 1987, 62, pp.4319. ⟨in2p3-00017601⟩
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