Mechanism of formation of Schottky diodes - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Journal of Applied Physics Year : 1978

Mechanism of formation of Schottky diodes

J.P. Ponpon
  • Function : Author
Institut de Recherches Subatomiques
P. Siffert
  • Function : Author
Institut de Recherches Subatomiques

Yvette Heyd  : Connect in order to contact the contributor

https://hal.in2p3.fr/in2p3-00018026

Submitted on : Wednesday, November 8, 2000-9:01:25 AM

Last modification on : Tuesday, November 7, 2023-11:28:04 AM

No file

Dates and versions

in2p3-00018026 , version 1 (08-11-2000)

Identifiers

  • HAL Id : in2p3-00018026 , version 1

Cite

J.P. Ponpon, P. Siffert. Mechanism of formation of Schottky diodes. Journal of Applied Physics, 1978, 49, pp.6004. ⟨in2p3-00018026⟩

Export

BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite

Collections

IN2P3 CNRS CGE SITE-ALSACE
7 View
0 Download

Share

Gmail Facebook X LinkedIn More