Temperature dependence of the average energy per electron-hole pair in silicon and germanium (in the presence of gamma-ray and alpha-particle bombardments) - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Radiation Effects Year : 1973

Temperature dependence of the average energy per electron-hole pair in silicon and germanium (in the presence of gamma-ray and alpha-particle bombardments)

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in2p3-00018454 , version 1 (21-12-2000)

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  • HAL Id : in2p3-00018454 , version 1

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R. Stuck, J.P. Ponpon, R. Berger, P. Siffert. Temperature dependence of the average energy per electron-hole pair in silicon and germanium (in the presence of gamma-ray and alpha-particle bombardments). Radiation Effects, 1973, 20, pp.75-80. ⟨in2p3-00018454⟩
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