Thin dE/dx detector of uniform thickness made on epitaxial silicon - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Nuclear Instruments and Methods Year : 1973
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in2p3-00018474 , version 1 (22-12-2000)

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  • HAL Id : in2p3-00018474 , version 1

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J.P. Ponpon, P. Siffert, F. Vazeille. Thin dE/dx detector of uniform thickness made on epitaxial silicon. Nuclear Instruments and Methods, 1973, 112, pp.465-467. ⟨in2p3-00018474⟩
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