TSC defect level in silicon produced by irradiation with muons of GeV-energy

H.M. Heijne; J.C. Muller; P. Siffert

Journal Articles Radiation Effects Year : 1976

TSC defect level in silicon produced by irradiation with muons of GeV-energy

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H.M. Heijne

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J.C. Muller

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P. Siffert

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Institut de Recherches Subatomiques

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Submitted on : Tuesday, January 16, 2001-10:57:07 AM

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in2p3-00018725 , version 1 (16-01-2001)

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HAL Id : in2p3-00018725 , version 1

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H.M. Heijne, J.C. Muller, P. Siffert. TSC defect level in silicon produced by irradiation with muons of GeV-energy. Radiation Effects, 1976, 29, pp.25-26. ⟨in2p3-00018725⟩

TSC defect level in silicon produced by irradiation with muons of GeV-energy

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