Study of defects in silicon after low energy h+ implantation by dlts measurements

J. Krynicki; J.C. Muller; P. Siffert; I. Brylowska; K. Paprocki

Journal Articles physica status solidi (a) Year : 1987

Study of defects in silicon after low energy h+ implantation by dlts measurements

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J. Krynicki

Function : Author

J.C. Muller

Function : Author

Institut de Recherches Subatomiques

P. Siffert

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Institut de Recherches Subatomiques

I. Brylowska

Function : Author

K. Paprocki

Function : Author

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Submitted on : Thursday, April 26, 2001-2:06:19 PM

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in2p3-00019296 , version 1 (26-04-2001)

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J. Krynicki, J.C. Muller, P. Siffert, I. Brylowska, K. Paprocki. Study of defects in silicon after low energy h+ implantation by dlts measurements. physica status solidi (a), 1987, 100, pp.245-249. ⟨in2p3-00019296⟩

Study of defects in silicon after low energy h+ implantation by dlts measurements

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