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Journal Articles Materials Science and Engineering Year : 1991

The use of rapid thermal annealing for studying contamination in silicon

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in2p3-00019444 , version 1 (30-05-2001)

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  • HAL Id : in2p3-00019444 , version 1

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B. Hartiti, A. Slaoui, J.C. Muller, P. Siffert. The use of rapid thermal annealing for studying contamination in silicon. Materials Science and Engineering, 1991, B10, pp.L11-L14. ⟨in2p3-00019444⟩
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