The use of rapid thermal annealing for studying contamination in silicon

B. Hartiti; A. Slaoui; J.C. Muller; P. Siffert

Journal Articles Materials Science and Engineering Year : 1991

The use of rapid thermal annealing for studying contamination in silicon

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1

B. Hartiti

Function : Author

A. Slaoui

Function : Author

Institut de Recherches Subatomiques

J.C. Muller

Function : Author

Institut de Recherches Subatomiques

P. Siffert

Function : Author

Institut de Recherches Subatomiques

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Instrumentation and Detectors [physics.ins-det]

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Submitted on : Wednesday, May 30, 2001-10:37:16 AM

Last modification on : Friday, June 2, 2023-3:36:26 PM

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in2p3-00019444 , version 1 (30-05-2001)

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HAL Id : in2p3-00019444 , version 1

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B. Hartiti, A. Slaoui, J.C. Muller, P. Siffert. The use of rapid thermal annealing for studying contamination in silicon. Materials Science and Engineering, 1991, B10, pp.L11-L14. ⟨in2p3-00019444⟩

The use of rapid thermal annealing for studying contamination in silicon

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