Hard photon yields from (70-240) GeV electrons incident near axial directions on Si, Ge and W single crystals with a large thickness variation

R. Medenwaldt; S.P. Mooler; S. Tang-Petersen; E. Uggerhoj; K. Elsener; M. Hage-Ali; P. Siffert; J.P. Stoquert; P. Sona; K. Maier

Journal Articles Physics Letters B Year : 1990

Hard photon yields from (70-240) GeV electrons incident near axial directions on Si, Ge and W single crystals with a large thickness variation

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1

R. Medenwaldt

Function : Author

S.P. Mooler

Function : Author

S. Tang-Petersen

Function : Author

E. Uggerhoj

Function : Author

K. Elsener

Function : Author

M. Hage-Ali

Function : Author

Institut de Recherches Subatomiques

P. Siffert

Function : Author

Institut de Recherches Subatomiques

J.P. Stoquert

Function : Author

Institut de Recherches Subatomiques

P. Sona

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K. Maier

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Yvette Heyd : Connect in order to contact the contributor

https://hal.in2p3.fr/in2p3-00019448

Submitted on : Wednesday, May 30, 2001-11:16:09 AM

Last modification on : Friday, June 2, 2023-3:36:26 PM

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in2p3-00019448 , version 1 (30-05-2001)

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HAL Id : in2p3-00019448 , version 1

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R. Medenwaldt, S.P. Mooler, S. Tang-Petersen, E. Uggerhoj, K. Elsener, et al.. Hard photon yields from (70-240) GeV electrons incident near axial directions on Si, Ge and W single crystals with a large thickness variation. Physics Letters B, 1990, 242, pp.517-522. ⟨in2p3-00019448⟩

Hard photon yields from (70-240) GeV electrons incident near axial directions on Si, Ge and W single crystals with a large thickness variation

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