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Journal Articles Journal of Applied Physics Year : 1989

On the origin of rapid thermal process induced recombination centers in silicon

W. Eichhammmer
  • Function : Author
V.-T. Quat
  • Function : Author
P. Siffert
  • Function : Author
Institut de Recherches Subatomiques

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Instrumentation and Detectors [physics.ins-det]

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https://hal.in2p3.fr/in2p3-00019449

Submitted on : Wednesday, May 30, 2001-11:24:13 AM

Last modification on : Friday, June 2, 2023-3:36:26 PM

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in2p3-00019449 , version 1 (30-05-2001)

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  • HAL Id : in2p3-00019449 , version 1

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W. Eichhammmer, V.-T. Quat, P. Siffert. On the origin of rapid thermal process induced recombination centers in silicon. Journal of Applied Physics, 1989, 66, pp.3857-3865. ⟨in2p3-00019449⟩

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