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Journal Articles Journal of Applied Physics Year : 1989

On the origin of rapid thermal process induced recombination centers in silicon

W. Eichhammmer
  • Function : Author
V.-T. Quat
  • Function : Author
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in2p3-00019449 , version 1 (30-05-2001)

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  • HAL Id : in2p3-00019449 , version 1

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W. Eichhammmer, V.-T. Quat, P. Siffert. On the origin of rapid thermal process induced recombination centers in silicon. Journal of Applied Physics, 1989, 66, pp.3857-3865. ⟨in2p3-00019449⟩
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