A study of 2 MeV oxygen implantation to form deeply buried SiO$_2$ layers - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Journal of Materials Research Year : 1989

A study of 2 MeV oxygen implantation to form deeply buried SiO$_2$ layers

No file

Dates and versions

in2p3-00019452 , version 1 (30-05-2001)

Identifiers

  • HAL Id : in2p3-00019452 , version 1

Cite

J.J. Grob, A. Grob, P. Thevenin, P. Siffert, C. d'Anterroches, et al.. A study of 2 MeV oxygen implantation to form deeply buried SiO$_2$ layers. Journal of Materials Research, 1989, 4, pp.1227-1232. ⟨in2p3-00019452⟩
11 View
0 Download

Share

Gmail Mastodon Facebook X LinkedIn More