Journal Articles
Materials Science and Engineering
Year : 1989
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https://hal.in2p3.fr/in2p3-00019453
Submitted on : Wednesday, May 30, 2001-1:47:32 PM
Last modification on : Friday, June 2, 2023-3:36:26 PM
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- HAL Id : in2p3-00019453 , version 1
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B. Hartiti, A. Slaoui, J.C. Muller, P. Siffert. Thermal annealing of excimer-laser-induced defects in virgin silicon. Materials Science and Engineering, 1989, B4, pp.257-260. ⟨in2p3-00019453⟩
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