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Journal Articles Applied Physics Letters Year : 1989

Inhomogeneous defect activation by rapid thermal processes in silicon

V. Thong-Quat
  • Function : Author
Institut de Recherches Subatomiques
W. Eichhammer
  • Function : Author
P. Siffert
  • Function : Author
Institut de Recherches Subatomiques

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Instrumentation and Detectors [physics.ins-det]

Yvette Heyd  : Connect in order to contact the contributor

https://hal.in2p3.fr/in2p3-00019454

Submitted on : Wednesday, May 30, 2001-1:55:39 PM

Last modification on : Tuesday, November 7, 2023-11:28:04 AM

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in2p3-00019454 , version 1 (30-05-2001)

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  • HAL Id : in2p3-00019454 , version 1

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V. Thong-Quat, W. Eichhammer, P. Siffert. Inhomogeneous defect activation by rapid thermal processes in silicon. Applied Physics Letters, 1989, 54, pp.1235-1237. ⟨in2p3-00019454⟩

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