Electron properties of defects created by 1.6 GeV argon ions in silicon - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Materials Science and Engineering Year : 1989

Electron properties of defects created by 1.6 GeV argon ions in silicon

J. Krynicki
  • Function : Author
M. Toulemonde
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Dates and versions

in2p3-00019455 , version 1 (30-05-2001)

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  • HAL Id : in2p3-00019455 , version 1

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J. Krynicki, M. Toulemonde, J.C. Muller, P. Siffert. Electron properties of defects created by 1.6 GeV argon ions in silicon. Materials Science and Engineering, 1989, B2, pp.105-110. ⟨in2p3-00019455⟩
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