Journal Articles
Materials Science and Engineering
Year : 1989
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https://hal.in2p3.fr/in2p3-00019455
Submitted on : Wednesday, May 30, 2001-2:02:37 PM
Last modification on : Tuesday, February 7, 2023-2:44:38 PM
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- HAL Id : in2p3-00019455 , version 1
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J. Krynicki, M. Toulemonde, J.C. Muller, P. Siffert. Electron properties of defects created by 1.6 GeV argon ions in silicon. Materials Science and Engineering, 1989, B2, pp.105-110. ⟨in2p3-00019455⟩
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