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Journal Articles Radiation Effects and Defects in Solids Year : 1989

Damage related deep electronic levels in silicon irradiated with 1.6 GeV Ar ions

J. Krynicki
  • Function : Author
M. Toulemonde
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Dates and versions

in2p3-00019456 , version 1 (30-05-2001)

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  • HAL Id : in2p3-00019456 , version 1

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J. Krynicki, M. Toulemonde, J.C. Muller, P. Siffert. Damage related deep electronic levels in silicon irradiated with 1.6 GeV Ar ions. Radiation Effects and Defects in Solids, 1989, 110, pp.203-205. ⟨in2p3-00019456⟩
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