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Journal Articles Applied physics. A, Materials science & processing Year : 1987

Rapid thermal annealing of electrically-active defects in virgin and implanted silicon

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in2p3-00019463 , version 1 (31-05-2001)

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  • HAL Id : in2p3-00019463 , version 1

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W.O. Adekoya, J.C. Muller, P. Siffert. Rapid thermal annealing of electrically-active defects in virgin and implanted silicon. Applied physics. A, Materials science & processing, 1987, 42, pp.227-232. ⟨in2p3-00019463⟩
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