The use of H$_2$ and NH$_3$ ion implantation in the passivation of defects in silicon ribbon grown by the ribbon-against-drop technique

E. Courcelle; J.C. Muller; P. Siffert; C. Belouet

Journal Articles Solar Cells Year : 1985

The use of H$_2$ and NH$_3$ ion implantation in the passivation of defects in silicon ribbon grown by the ribbon-against-drop technique

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1

E. Courcelle

Function : Author

Institut de Recherches Subatomiques

J.C. Muller

Function : Author

Institut de Recherches Subatomiques

P. Siffert

Function : Author

Institut de Recherches Subatomiques

C. Belouet

Function : Author

Institut de Recherches Subatomiques

Domains

Instrumentation and Detectors [physics.ins-det]

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https://hal.in2p3.fr/in2p3-00019464

Submitted on : Thursday, May 31, 2001-8:18:59 AM

Last modification on : Tuesday, November 7, 2023-11:28:04 AM

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in2p3-00019464 , version 1 (31-05-2001)

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HAL Id : in2p3-00019464 , version 1

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E. Courcelle, J.C. Muller, P. Siffert, C. Belouet. The use of H$_2$ and NH$_3$ ion implantation in the passivation of defects in silicon ribbon grown by the ribbon-against-drop technique. Solar Cells, 1985, 14, pp.157-166. ⟨in2p3-00019464⟩

The use of H$_2$ and NH$_3$ ion implantation in the passivation of defects in silicon ribbon grown by the ribbon-against-drop technique

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