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Journal Articles Applied physics. A, Materials science & processing Year : 1983

Deep levels subsisting in ion implanted silicon after various transient thermal annealing procedures

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Instrumentation and Detectors [physics.ins-det]

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https://hal.in2p3.fr/in2p3-00019477

Submitted on : Thursday, May 31, 2001-10:20:48 AM

Last modification on : Friday, June 2, 2023-3:36:26 PM

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in2p3-00019477 , version 1 (31-05-2001)

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  • HAL Id : in2p3-00019477 , version 1

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A. Mesli, J.C. Muller, P. Siffert. Deep levels subsisting in ion implanted silicon after various transient thermal annealing procedures. Applied physics. A, Materials science & processing, 1983, A31, pp.147-152. ⟨in2p3-00019477⟩

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