Deep levels subsisting in ion implanted silicon after various transient thermal annealing procedures - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Applied physics. A, Materials science & processing Year : 1983

Deep levels subsisting in ion implanted silicon after various transient thermal annealing procedures

No file

Dates and versions

in2p3-00019477 , version 1 (31-05-2001)

Identifiers

  • HAL Id : in2p3-00019477 , version 1

Cite

A. Mesli, J.C. Muller, P. Siffert. Deep levels subsisting in ion implanted silicon after various transient thermal annealing procedures. Applied physics. A, Materials science & processing, 1983, A31, pp.147-152. ⟨in2p3-00019477⟩
4 View
0 Download

Share

Gmail Mastodon Facebook X LinkedIn More