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Journal Articles Journal of Applied Physics Year : 1982

Pulsed laser annealing of RF sputtered amorphous Si-H films doped with arsenic

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Instrumentation and Detectors [physics.ins-det]

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https://hal.in2p3.fr/in2p3-00019482

Submitted on : Thursday, May 31, 2001-12:44:03 PM

Last modification on : Friday, June 2, 2023-3:36:26 PM

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in2p3-00019482 , version 1 (31-05-2001)

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  • HAL Id : in2p3-00019482 , version 1

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E. Fogarassy, R. Stuck, M. Toulemonde, J.C. Bruyere, P. Siffert. Pulsed laser annealing of RF sputtered amorphous Si-H films doped with arsenic. Journal of Applied Physics, 1982, 53, pp.3261-3266. ⟨in2p3-00019482⟩

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