Composition etching and optical properties of silicon nitride films deposited by plasma-enhanced chemical vapour deposition prepared in variable Nh3-N2 gas mixture diluted with helium - Archive ouverte HAL Access content directly
Journal Articles Thin Solid Films Year : 1991

Composition etching and optical properties of silicon nitride films deposited by plasma-enhanced chemical vapour deposition prepared in variable Nh3-N2 gas mixture diluted with helium

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B. Reynes
  • Function : Author
C. Ance
  • Function : Author
J.C. Bruyere
  • Function : Author
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in2p3-00022586 , version 1 (25-05-2000)

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  • HAL Id : in2p3-00022586 , version 1

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B. Reynes, C. Ance, J.P. Stoquert, J.C. Bruyere. Composition etching and optical properties of silicon nitride films deposited by plasma-enhanced chemical vapour deposition prepared in variable Nh3-N2 gas mixture diluted with helium. Thin Solid Films, 1991, 203, pp.87-94. ⟨in2p3-00022586⟩
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