Composition etching and optical properties of silicon nitride films deposited by plasma-enhanced chemical vapour deposition prepared in variable Nh3-N2 gas mixture diluted with helium

B. Reynes; C. Ance; J.P. Stoquert; J.C. Bruyere

Journal Articles Thin Solid Films Year : 1991

Composition etching and optical properties of silicon nitride films deposited by plasma-enhanced chemical vapour deposition prepared in variable Nh3-N2 gas mixture diluted with helium

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B. Reynes

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C. Ance

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J.P. Stoquert

Function : Author

Institut de Recherches Subatomiques

J.C. Bruyere

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Submitted on : Thursday, May 25, 2000-2:49:40 PM

Last modification on : Tuesday, February 7, 2023-2:44:38 PM

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in2p3-00022586 , version 1 (25-05-2000)

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B. Reynes, C. Ance, J.P. Stoquert, J.C. Bruyere. Composition etching and optical properties of silicon nitride films deposited by plasma-enhanced chemical vapour deposition prepared in variable Nh3-N2 gas mixture diluted with helium. Thin Solid Films, 1991, 203, pp.87-94. ⟨in2p3-00022586⟩

Composition etching and optical properties of silicon nitride films deposited by plasma-enhanced chemical vapour deposition prepared in variable Nh3-N2 gas mixture diluted with helium

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