Theoretical approach of the photofield emission of a degenerated semiconductor. - Case of tipped, weakly P-doped, silicon photocathodes. - Archive ouverte HAL Access content directly
Journal Articles Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Year : 1998

Theoretical approach of the photofield emission of a degenerated semiconductor. - Case of tipped, weakly P-doped, silicon photocathodes.

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Physics [physics] Physics [physics] Instrumentation and Detectors [physics.ins-det]

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Submitted on : Thursday, April 20, 2000-9:30:50 AM

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in2p3-00022925 , version 1 (20-04-2000)

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  • HAL Id : in2p3-00022925 , version 1

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A. Chbihi, M. Dupont, J. Gardes, Z. Jaber, M. Querrou. Theoretical approach of the photofield emission of a degenerated semiconductor. - Case of tipped, weakly P-doped, silicon photocathodes.. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1998, 404, pp.437-444. ⟨in2p3-00022925⟩

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