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Conference Papers Year : 2007

ECRIS Charge Breeding at ISAC

F. Ames
  • Function : Author
R. Baartman
  • Function : Author
P. Bricault
  • Function : Author
K. Jayamanna
  • Function : Author
M. Mcdonald
M. Olivo
  • Function : Author
P. Schmor
  • Function : Author
D.H.L. Yuan
  • Function : Author


Efficient and fast charge state breeding is an important parameter for the acceleration of radioactive ions at ISOL facilities. Most on-line ion sources produce only singly charged ions but efficient accelerators require high charge states. For ISAC at TRIUMF the acceptance of the accelerator is at an A/q value of 30 and if further stripping should be avoided it is at A/q<7. An ECRIS (14 GHz PHOENIX from Pantechnik) has been set-up at a test bench. Singly charged ions have been produced with several ion sources typical for the on-line operation and injected into the charge breeder. The main purpose of the tests has been the optimization of the efficiency for the charge breeding into the desired charge state and the investigation of the breeding time. It should be short compared to the lifetime of the radioactive ions. The maximum efficiencies reached so far are up to about 6% for noble gas ions and about 3.5% for alkalines and the breeding times up to about 400 ms, depending on the charge state. As the radioactive ions are produced only in small quantities (single ions up to 10^10 per second) background from ions of the support gas or from residual gas should be minimized. Therefore, clean helium gas has been chosen as a support gas. A good mass resolution for the high charge mass analysis is essential for the separation of the desired ions from background peaks. A combination of magnetic and electrostatic sector fields ensures this and separates scattered or charge exchanged ions from the beam. For the further beam transport to the accelerator cross sections for charge exchange of the highly charged ions with the residual gas have been determined. The status of the test measurements and the planning of the on-line installation will be presented.
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Dates and versions

in2p3-00081116 , version 1 (22-06-2006)


  • HAL Id : in2p3-00081116 , version 1


F. Ames, R. Baartman, P. Bricault, K. Jayamanna, M. Mcdonald, et al.. ECRIS Charge Breeding at ISAC. 17th International Workshop on ECR Ion Sources and Their Applications, 2006, Lanzhou, China. pp.211-215. ⟨in2p3-00081116⟩
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