Photoluminescence of Eu$^{3+}$ and Sm$^{3+}$ ions in SiO$_2$, SiO$_2$:Na$_2$O films formed from gels and ion implanted silica - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Journal of Optoelectronics and Advanced Materials Year : 2007

Photoluminescence of Eu$^{3+}$ and Sm$^{3+}$ ions in SiO$_2$, SiO$_2$:Na$_2$O films formed from gels and ion implanted silica

Abstract

Thin films of silica containing various concentrations of Eu3+ or Sm3+ ions were prepared by sol-gel chemistry and ion implantation for comparing the optical properties of these rare earth ions in both types of matrices after annealing. Sodium acetate was added in some of the gel films for investigating the changes in the crystal field and its influence on the RE emission. We found that the optimal temperature of annealing in air for the release of C and H from gels or defects from ion implanted silica, without segregating the rare earth, is of about 600 °C. The photoluminescence of Eu3+ and Sm3+ is enhanced significantly with the addition of Na in gels and the emission of Eu3+ becomes 20 times as intense as in silica implanted with the same concentration of Eu3+ ions.
No file

Dates and versions

in2p3-00166936 , version 1 (13-08-2007)

Identifiers

  • HAL Id : in2p3-00166936 , version 1

Cite

J.C. Pivin, M. Sendova-Vassileva, G. Lagarde, F. Singh, A. Podhorodecki, et al.. Photoluminescence of Eu$^{3+}$ and Sm$^{3+}$ ions in SiO$_2$, SiO$_2$:Na$_2$O films formed from gels and ion implanted silica. Journal of Optoelectronics and Advanced Materials, 2007, 9, pp.1872-1877. ⟨in2p3-00166936⟩
4 View
0 Download

Share

Gmail Mastodon Facebook X LinkedIn More